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Home » Technology » Power Electronics » Aratas Unveils SiC Relay for 3,300V Power Switching

Aratas Unveils SiC Relay for 3,300V Power Switching

G3VH High-load-voltage SiC MOSFET Relay

Aratas America LLC has launched the G3VH, a silicon carbide (SiC) MOSFET relay designed for high-voltage switching applications requiring load voltages of up to 3,300V, as manufacturers seek more efficient power technologies for energy-intensive systems.

The company, formerly known as OMRON Electronic Components, said the new relay is available in 1,800V and 3,300V versions. It is designed to support applications including semiconductor test equipment, battery management systems and measuring instruments.

The launch comes as SiC-based power technologies gain adoption in renewable energy, data centres, industrial automation and transportation. Compared with conventional silicon power semiconductors, SiC offers higher dielectric breakdown strength, allowing switching devices to operate at higher voltages while maintaining relatively compact designs.

Aratas said the G3VH combines high voltage withstand capability with low ON resistance, low leakage current and high-speed switching. These characteristics are intended to reduce power losses and heat generation while supporting reliable operation in demanding high-voltage environments.

The relay provides 5,000 Vrms dielectric strength between its input and output, supporting applications where electrical isolation is critical. It is offered in PCB-terminal and surface-mount DIP 6-pin packages, giving equipment manufacturers options for integrating the relay into space-constrained designs.

The company said the G3VH can also contribute to faster inspection and more accurate defect detection and conformance testing. In semiconductor testing and measurement applications, improved switching performance can support greater measurement stability and inspection throughput.

“As power semiconductor technology continues to evolve, equipment manufacturers need switching solutions that can reliably support higher voltages while improving efficiency and performance,” said Evelyn Martinez, product manager at Aratas. She said the G3VH combines SiC technology with a compact form factor for next-generation high-voltage applications.

The relay is aimed at systems where precise and reliable high-voltage switching is required. Its low ON resistance is designed to limit conduction losses, while low leakage current can help maintain circuit efficiency when the relay is in its off state. High-speed switching provides further flexibility for test and measurement applications that require rapid control of high-voltage signals.

For battery management systems, semiconductor test equipment and industrial measurement platforms, the ability to handle higher voltages within a smaller package could help equipment manufacturers reduce system size while maintaining electrical performance.

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