Toshiba Electronic Devices & Storage Corporation has launched the IX800FXF2YMS4, a dual silicon carbide (SiC) MOSFET module aimed at industrial equipment such as railway traction systems, renewable energy generation and power conversion equipment.
The module uses Toshiba’s third-generation SiC MOSFET chips and combines a 3,300V drain-source voltage rating with an 800A DC drain-current rating. A key feature is its specified I2t limit value of 300kA²s in the diode section, which indicates the module’s surge-current capability under abnormal operating conditions.
Industrial power systems can experience large transient currents during faults and other abnormal conditions. Toshiba said the new module is designed to provide higher surge-current capability while also addressing requirements for efficiency, equipment size and reliability.
Designed for High-Current Industrial Applications
The IX800FXF2YMS4 is intended for railway traction inverters and converters, renewable energy power-generation systems, solid-state transformers, uninterruptible power supplies and energy-storage systems. It can also be used in industrial motor-control equipment.
The module has a typical drain-source on-voltage of 1.4V at an 800A drain current, a characteristic that can help reduce conduction losses. Its typical turn-on switching loss is 185mJ, while turn-off switching loss is 175mJ.
Lower conduction and switching losses can reduce the amount of heat generated during operation, potentially allowing equipment manufacturers to use smaller cooling systems depending on the overall system design.
| Specification | IX800FXF2YMS4 |
|---|---|
| Device type | Dual SiC MOSFET module |
| Package | iXPLV |
| Dimensions | 144 × 99.5 × 40 mm |
| Drain-source voltage (VDSS) | 3,300V |
| DC drain current (ID) | 800A |
| Pulsed drain current (IDP) | 1,600A |
| Channel temperature rating | 175°C |
| Isolation voltage | 6,000Vrms |
| Diode I2t limit | 300kA²s |
| Drain-source on-voltage | 1.4V typ. |
| Source-drain on-voltage | 1.4V typ. |
| Turn-on switching loss (Eon) | 185mJ typ. |
| Turn-off switching loss (Eoff) | 175mJ typ. |
| Stray inductance | 12nH typ. |
iXPLV Package Targets Thermal Reliability
Toshiba is also using its iXPLV package, which is designed for mounting compatibility across industrial applications. The module employs silver-sintering bonding technology for the SiC chips.
According to Toshiba, the bonding approach improves heat resistance and the reliability of connections within the module. The package supports a 175°C channel-temperature rating, a specification relevant to industrial power equipment operating under demanding thermal conditions.
The IX800FXF2YMS4 expands Toshiba’s iXPLV-based SiC MOSFET lineup to four modules. The company said it plans to continue expanding its SiC MOSFET portfolio to address different industrial equipment requirements.
SiC power devices are increasingly used in high-voltage power conversion because their electrical and thermal characteristics can support higher operating efficiency and power density than conventional silicon-based solutions in suitable applications. For equipment such as railway traction and renewable-energy power converters, these characteristics can influence system size, cooling requirements and operating losses.
