pSemi, a Murata company focused on RF semiconductor integration, has expanded its UltraCMOS+ portfolio with the introduction of two new RF switches aimed at next-generation wireless infrastructure and test applications.
The company announced the PE42544 SP4T RF switch and the PE42429 SPDT RF switch, both designed to deliver high isolation, low insertion loss, and strong linearity performance for demanding RF environments, including wireless infrastructure, test and measurement systems, and automated test equipment (ATE).
The launch reflects growing demand for compact, high-performance RF components as wireless networks increase in complexity and spectrum utilization expands across 5G and emerging 6G research.
The PE42544 SP4T switch operates from 9 kHz to 8.5 GHz and delivers up to 40 dB isolation. It features a low insertion loss of 1.4 dB at 8.5 GHz and a switching time of 300 nanoseconds. The device is built on pSemi’s UltraCMOS+ RF-SOI platform with HaRP™ technology enhancements, supporting a high linearity rating of 61 dBm IIP3. It is packaged in a 20-lead 3 × 3 mm QFN format and rated MSL 1 for moisture sensitivity.
Rodd Novak, vice president of sales and marketing at pSemi, said the device is designed for demanding RF environments. “The PE42544 expands our high-performance RF switch portfolio, providing customers with a versatile SP4T solution engineered for demanding test environments and next generation RF systems,” Novak said.
The second device, the PE42429 SPDT RF switch, also operates across 9 kHz to 8.5 GHz. It offers higher isolation performance of 46 dB at 6 GHz, along with a lower insertion loss of 1.1 dB at 8.5 GHz. The switch delivers a switching speed of 490 nanoseconds and achieves 65 dBm IIP3 linearity.
The device is designed for wireless infrastructure, RF test systems, and automated testing environments. It comes in a compact 2.0 × 2.0 mm QFN package and also carries an MSL 1 rating.
Novak said the PE42429 strengthens the company’s RF portfolio. “The PE42429 strengthens our RF switch portfolio with industry-leading isolation and linearity, enabling OEMs and test engineers to build next-generation RF systems with greater efficiency and signal integrity,” he said.
Both devices leverage pSemi’s UltraCMOS+ RF-SOI process and HaRP technology, which are designed to improve performance consistency, signal integrity, and thermal stability across a wide operating range.
