The U.S. International Trade Commission (ITC) has affirmed its earlier determination in favor of Infineon Technologies AG, ordering import and sales bans against Chinese semiconductor company Innoscience following a patent infringement ruling related to gallium nitride (GaN) technology.
The Full Commission upheld its initial decision from December 2025, concluding that Innoscience infringed an Infineon patent. The ruling introduces restrictions on imports and sales of the affected products in the United States. The decision is now subject to a 60-day presidential review period, during which it may be affirmed, modified, or disapproved.
“This decision once again highlights the robustness of Infineon’s intellectual property. It reinforces our commitment to actively protect Infineon’s patent portfolio and uphold fair competition in the industry,” said Johannes Schoiswohl, Senior Vice President and Head of the GaN Systems Business Line at Infineon.
He added that Infineon’s 300-millimeter GaN manufacturing capability positions the company to scale performance, quality, and cost efficiencies, supporting broader industry transitions toward decarbonization and digitalization.
The ruling marks another legal development in ongoing intellectual property disputes involving GaN technologies. In parallel proceedings in Germany, Infineon is pursuing infringement claims against Innoscience at the Munich District Court I, involving three patents and one utility model. The court previously ruled in August 2024 that Innoscience had infringed one Infineon patent. Additional hearings related to other claims are scheduled for June 2026.
Infineon is one of the leading integrated device manufacturers in the GaN semiconductor market and maintains what it describes as the industry’s broadest intellectual property portfolio, with approximately 450 GaN patent families. The company plays a significant role in the development of GaN-based power systems used across renewable energy infrastructure, electric vehicles, industrial automation, and AI data centers.
Gallium nitride semiconductors are increasingly viewed as a critical technology in power electronics due to their ability to deliver higher power density, faster switching speeds, and reduced energy losses compared to traditional silicon-based devices. These characteristics enable smaller system designs while improving efficiency and thermal performance.
Infineon continues to expand its presence across multiple semiconductor material platforms, including silicon, silicon carbide, and gallium nitride, as demand grows for more efficient power conversion technologies in electrification and digital infrastructure applications.
